BUK6E2R3-40C fet equivalent, n-channel trenchmos intermediate level fet.
* AEC Q101 compliant
* Suitable for intermediate level gate drive sources
* Suitable for thermally demanding environments due to 175 °C rating
1.3 Applicatio.
1.2 Features and benefits
* AEC Q101 compliant
* Suitable for intermediate level gate drive sources
* Suit.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perform.
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